JPH0190199U - - Google Patents
Info
- Publication number
- JPH0190199U JPH0190199U JP18426087U JP18426087U JPH0190199U JP H0190199 U JPH0190199 U JP H0190199U JP 18426087 U JP18426087 U JP 18426087U JP 18426087 U JP18426087 U JP 18426087U JP H0190199 U JPH0190199 U JP H0190199U
- Authority
- JP
- Japan
- Prior art keywords
- load
- mos transistor
- series
- memory circuit
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000295 complement effect Effects 0.000 claims 1
- 238000006880 cross-coupling reaction Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
Landscapes
- Static Random-Access Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18426087U JPH0190199U (en]) | 1987-12-01 | 1987-12-01 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18426087U JPH0190199U (en]) | 1987-12-01 | 1987-12-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0190199U true JPH0190199U (en]) | 1989-06-14 |
Family
ID=31475633
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18426087U Pending JPH0190199U (en]) | 1987-12-01 | 1987-12-01 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0190199U (en]) |
-
1987
- 1987-12-01 JP JP18426087U patent/JPH0190199U/ja active Pending
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